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BACKGROUND OF THE INVENTION
The present invention relates to electrophotosensitive members, particularly amorphous silicon:germanium photosensitive members.
Amorphous silicon:germanium (hereinafter referred to as a-Si:Ge), because of its high sensitivity toward long wavelength light, is expected for
CROSS-REFERENCE TO RELATED APPLICATIONS
This is the U.S. National Stage of International Patent Application No. PCT/CN2017/112103 filed Nov. 21, 2017, which was published in Chinese under PCT Article 21(2), and which in turn claims the benefit of China Patent Application No. 201710025804.0 filed