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germanium/dental caries
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Página 1 desde 18 resultados
Laser source with a germanium-based suspended membrane and an integrated waveguide that participates in forming the optical cavity
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TECHNICAL FIELD
The technical field of the invention is that of laser sources comprising a germanium-based suspended membrane the optical gain medium of which is located in a central portion that is tensilely stressed by tensioning arms.
PRIOR ART
In various optoelectronic or microelectronic
Compositions containing organo germanium compounds useful in the prevention of caries
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BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to composition of matter useful in dental hygiene, more specifically in the prevention of caries.
2. Description of the Prior Art
One of the significant factors in the formation of caries is the conversion of soluble
Semiconductor devices with shaped cavities for embedding germanium material and manufacturing processes thereof
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CROSS-REFERENCES TO RELATED APPLICATIONS
The present application claims priority to Chinese Patent Application No. 201510079513.0, filed on Feb. 13, 2015, entitled "SEMICONDUCTOR DEVICES WITH SHAPED CAVITIES FOR EMBEDDING GERMANIUM MATERIAL AND MANUFACTURING PROCESSES THEREOF", which is incorporated
Shaped cavity for SiGe filling material
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CROSS-REFERENCES TO RELATED APPLICATIONS
The present application claims priority to Chinese Patent Application No. 201510175220.2, filed on Apr. 14, 2015, entitled "SHAPED CAVITY FOR SIGE FILLING MATERIAL", which is incorporated by reference herein for all purposes.
STATEMENT AS TO RIGHTS TO
Post gate silicon germanium channel condensation and method for producing the same
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TECHNICAL FIELD
The present disclosure relates to the manufacture of silicon germanium (SiGe) fin field effect transistor (FinFET) semiconductor devices. The present disclosure is particularly applicable to the 14 nanometer (nm) technology node and beyond.
BACKGROUND
SiGe provides higher carrier
Post gate silicon germanium channel condensation and method for producing the same
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TECHNICAL FIELD
The present disclosure relates to the manufacture of silicon germanium (SiGe) fin field effect transistor (FinFET) semiconductor devices. The present disclosure is particularly applicable to the 14 nanometer (nm) technology node and beyond.
BACKGROUND
SiGe provides higher carrier
Method for fabricating heterojunction bipolar transistors
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BACKGROUND
The present invention relates generally to semiconductor devices and, more particularly, to heterojunction bipolar transistors and methods of manufacturing the same.
With advances in high-speed communications and digital signal processing, there is a corresponding need for improved
Method of making a strained structure of a semiconductor device
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TECHNICAL FIELD
This disclosure relates to integrated circuit fabrication and, more particularly, to a semiconductor device with a strained structure.
BACKGROUND
When a semiconductor device, such as a metal-oxide-semiconductor field-effect transistor (MOSFET), is scaled down through various
Method and system for optoelectronics transceivers integrated on a CMOS chip
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FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[Not Applicable]
MICROFICHE/COPYRIGHT REFERENCE
[Not Applicable]
FIELD OF THE INVENTION
Certain embodiments of the invention relate to integrated circuit power control. More specifically, certain embodiments of the invention relate to a method and system
Silicon waveguide on bulk silicon substrate and methods of forming
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BACKGROUND
The subject matter disclosed herein relates to optical devices. More particularly, the subject matter relates to silicon-based optical devices.
As devices relying upon integrated circuits (ICs) have increased in complexity and functionality, those devices have required ever more dynamic
Isolation of bulk FET devices with embedded stressors
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BACKGROUND
The present invention relates to field effect transistor (FET) formation, and more specifically, to isolation of bulk FET devices with embedded stressors.
FET devices, such as finFETs and nanosheet FETs, include a channel region between the source and drain regions. Current in the channel
Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries
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BACKGROUND
High capacity electrochemically active materials are desirable for battery applications. However, these materials exhibit substantial volume changes during battery cycling, e.g. swelling during lithiation and contraction during delithiation. For example, silicon swells as much as 400%
Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries
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BACKGROUND
High capacity electrochemically active materials are desirable for battery applications. However, these materials exhibit substantial volume changes during battery cycling, e.g. swelling during lithiation and contraction during delithiation. For example, silicon swells as much as 400%
Interconnected hollow nanostructures containing high capacity active materials for use in rechargeable batteries
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BACKGROUND
High capacity electrochemically active materials are desirable for battery applications. However, these materials exhibit substantial volume changes during battery cycling, e.g. swelling during lithiation and contraction during delithiation. For example, silicon swells as much as 400%
Forming nanosheet transistor using sacrificial spacer and inner spacers
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TECHNICAL FIELD
The present invention relates generally to a method for fabricating nanosheet transistors and a structure formed by the method. More particularly, the present invention relates to a method for fabricating nanosheet transistors using a sacrificial spacer and inner spacers and a
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