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TECHNICAL FIELD
The technical field of the invention is that of laser sources comprising a germanium-based suspended membrane the optical gain medium of which is located in a central portion that is tensilely stressed by tensioning arms.
PRIOR ART
In various optoelectronic or microelectronic
BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to composition of matter useful in dental hygiene, more specifically in the prevention of caries.
2. Description of the Prior Art
One of the significant factors in the formation of caries is the conversion of soluble
CROSS-REFERENCES TO RELATED APPLICATIONS
The present application claims priority to Chinese Patent Application No. 201510079513.0, filed on Feb. 13, 2015, entitled "SEMICONDUCTOR DEVICES WITH SHAPED CAVITIES FOR EMBEDDING GERMANIUM MATERIAL AND MANUFACTURING PROCESSES THEREOF", which is incorporated
CROSS-REFERENCES TO RELATED APPLICATIONS
The present application claims priority to Chinese Patent Application No. 201510175220.2, filed on Apr. 14, 2015, entitled "SHAPED CAVITY FOR SIGE FILLING MATERIAL", which is incorporated by reference herein for all purposes.
STATEMENT AS TO RIGHTS TO
TECHNICAL FIELD
The present disclosure relates to the manufacture of silicon germanium (SiGe) fin field effect transistor (FinFET) semiconductor devices. The present disclosure is particularly applicable to the 14 nanometer (nm) technology node and beyond.
BACKGROUND
SiGe provides higher carrier
TECHNICAL FIELD
The present disclosure relates to the manufacture of silicon germanium (SiGe) fin field effect transistor (FinFET) semiconductor devices. The present disclosure is particularly applicable to the 14 nanometer (nm) technology node and beyond.
BACKGROUND
SiGe provides higher carrier
BACKGROUND
The present invention relates generally to semiconductor devices and, more particularly, to heterojunction bipolar transistors and methods of manufacturing the same.
With advances in high-speed communications and digital signal processing, there is a corresponding need for improved
TECHNICAL FIELD
This disclosure relates to integrated circuit fabrication and, more particularly, to a semiconductor device with a strained structure.
BACKGROUND
When a semiconductor device, such as a metal-oxide-semiconductor field-effect transistor (MOSFET), is scaled down through various
FEDERALLY SPONSORED RESEARCH OR DEVELOPMENT
[Not Applicable]
MICROFICHE/COPYRIGHT REFERENCE
[Not Applicable]
FIELD OF THE INVENTION
Certain embodiments of the invention relate to integrated circuit power control. More specifically, certain embodiments of the invention relate to a method and system
BACKGROUND
The subject matter disclosed herein relates to optical devices. More particularly, the subject matter relates to silicon-based optical devices.
As devices relying upon integrated circuits (ICs) have increased in complexity and functionality, those devices have required ever more dynamic
BACKGROUND
The present invention relates to field effect transistor (FET) formation, and more specifically, to isolation of bulk FET devices with embedded stressors.
FET devices, such as finFETs and nanosheet FETs, include a channel region between the source and drain regions. Current in the channel
BACKGROUND
High capacity electrochemically active materials are desirable for battery applications. However, these materials exhibit substantial volume changes during battery cycling, e.g. swelling during lithiation and contraction during delithiation. For example, silicon swells as much as 400%
BACKGROUND
High capacity electrochemically active materials are desirable for battery applications. However, these materials exhibit substantial volume changes during battery cycling, e.g. swelling during lithiation and contraction during delithiation. For example, silicon swells as much as 400%
BACKGROUND
High capacity electrochemically active materials are desirable for battery applications. However, these materials exhibit substantial volume changes during battery cycling, e.g. swelling during lithiation and contraction during delithiation. For example, silicon swells as much as 400%
TECHNICAL FIELD
The present invention relates generally to a method for fabricating nanosheet transistors and a structure formed by the method. More particularly, the present invention relates to a method for fabricating nanosheet transistors using a sacrificial spacer and inner spacers and a