Spanish
Albanian
Arabic
Armenian
Azerbaijani
Belarusian
Bengali
Bosnian
Catalan
Czech
Danish
Deutsch
Dutch
English
Estonian
Finnish
Français
Greek
Haitian Creole
Hebrew
Hindi
Hungarian
Icelandic
Indonesian
Irish
Italian
Japanese
Korean
Latvian
Lithuanian
Macedonian
Mongolian
Norwegian
Persian
Polish
Portuguese
Romanian
Russian
Serbian
Slovak
Slovenian
Spanish
Swahili
Swedish
Turkish
Ukrainian
Vietnamese
Български
中文(简体)
中文(繁體)
5 resultados
Electrical Properties and Interfacial Studies of HfxTi1-xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates.
Solo los usuarios registrados pueden traducir artículos
Iniciar sesión Registrarse
In this research, the hafnium titanate oxide thin films, TixHf1-xO₂, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide
Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate.
Solo los usuarios registrados pueden traducir artículos
Iniciar sesión Registrarse
We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO(2) film was investigated using atomic force microscopy and
Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays.
Solo los usuarios registrados pueden traducir artículos
Iniciar sesión Registrarse
We report the directed assembly of single-walled carbon nanotubes (SWCNTs) at lithographically defined positions on gate oxide surfaces, allowing for the high yield ( approximately 90%) and parallel fabrication of SWCNT device arrays. SWCNTs were first chemically functionalized through diazonium
Group 4 transition metal-benzene adducts: carbon ring deformation upon complexation.
Solo los usuarios registrados pueden traducir artículos
Iniciar sesión Registrarse
Benzene is reacted with titanium, zirconium, and hafnium metal atoms, which are produced by laser-ablation. The M(C(6)H(6)), M(C(6)H(6))(2), and M(2)(C(6)H(6))(3) complexes are formed, isolated in solid argon, and identified by infrared spectroscopy using isotopic substitution of the benzene
Nanometre-thin indium tin oxide for advanced high-performance electronics.
Solo los usuarios registrados pueden traducir artículos
Iniciar sesión Registrarse
Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical transmittance and electrical conductivity, its degenerate doping limits exploitation as a semiconduction material. In this work, we created short-channel active transistors based on an ultra-thin (down to 4 nm)
La base de datos de hierbas medicinales más completa respaldada por la ciencia
- Funciona en 55 idiomas
- Curas a base de hierbas respaldadas por la ciencia
- Reconocimiento de hierbas por imagen
- Mapa GPS interactivo: etiquete hierbas en la ubicación (próximamente)
- Leer publicaciones científicas relacionadas con su búsqueda
- Buscar hierbas medicinales por sus efectos.
- Organice sus intereses y manténgase al día con las noticias de investigación, ensayos clínicos y patentes.
Escriba un síntoma o una enfermedad y lea acerca de las hierbas que podrían ayudar, escriba una hierba y vea las enfermedades y los síntomas contra los que se usa.
* Toda la información se basa en investigaciones científicas publicadas.
