3 tulemused
BACKGROUND OF THE INVENTION
1. Field of the Invention
The field of the present invention relates to semiconductor devices and manufacture methods, and more specifically, to limiting regrowth and threshold voltage (Vt) shift in such devices.
2. Background
Limiting regrowth and threshold voltage (Vt)
BACKGROUND OF THE INVENTION
1. Priority
Priority is claimed as a continuation application to U.S. patent application Ser. No. 13/083,879, filed Apr. 11, 2011, the disclosure of which is incorporated herein by reference.
2. Field of the Invention
The field of the present invention relates to
TECHNICAL FIELD
The technical field relates generally to methods for fabricating integrated circuits, and more particularly relates to methods for fabricating integrated circuits with improved metal gate structures.
BACKGROUND
Transistors such as metal oxide semiconductor field effect transistors