hafnium/atrophy

In this research, the hafnium titanate oxide thin films, TixHf1-xO₂, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide

We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO(2) film was investigated using atomic force microscopy and

We report the directed assembly of single-walled carbon nanotubes (SWCNTs) at lithographically defined positions on gate oxide surfaces, allowing for the high yield ( approximately 90%) and parallel fabrication of SWCNT device arrays. SWCNTs were first chemically functionalized through diazonium

Benzene is reacted with titanium, zirconium, and hafnium metal atoms, which are produced by laser-ablation. The M(C(6)H(6)), M(C(6)H(6))(2), and M(2)(C(6)H(6))(3) complexes are formed, isolated in solid argon, and identified by infrared spectroscopy using isotopic substitution of the benzene

Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical transmittance and electrical conductivity, its degenerate doping limits exploitation as a semiconduction material. In this work, we created short-channel active transistors based on an ultra-thin (down to 4 nm)