hafnium/dental caries

BACKGROUND OF THE INVENTION 1. Field of the Invention The field of the present invention relates to semiconductor devices and manufacture methods, and more specifically, to limiting regrowth and threshold voltage (Vt) shift in such devices. 2. Background Limiting regrowth and threshold voltage (Vt)

BACKGROUND OF THE INVENTION 1. Priority Priority is claimed as a continuation application to U.S. patent application Ser. No. 13/083,879, filed Apr. 11, 2011, the disclosure of which is incorporated herein by reference. 2. Field of the Invention The field of the present invention relates to

TECHNICAL FIELD The technical field relates generally to methods for fabricating integrated circuits, and more particularly relates to methods for fabricating integrated circuits with improved metal gate structures. BACKGROUND Transistors such as metal oxide semiconductor field effect transistors