hafnium/fatigue

Ferroelectric hafnium zirconium oxide holds great promise for a broad spectrum of CMOS compatible and scaled microelectronic applications, including memory, low voltage transistors, and infrared sensors, among others. An outstanding challenge hindering implementation of this material is polarization

Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a

HfO2 based ferroelectrics are lead-free, simple binary oxides with nonperovskite structure and low permittivity. They just recently started attracting attention of theoretical groups in the fields of ferroelectric memories and electrostatic supercapacitors. A modified approach of harmonic analysis

For the rather new hafnia- and zirconia-based ferroelectrics, a lot of questions are still unsettled. Among them is the electric field cycling behavior consisting of (1) wake-up, (2) fatigue, and (3) the recently discovered subcycling-induced split-up/merging effect of transient current peaks in a

OBJECTIVE For implanted Björk-Shiley convexo-concave (BSCC) heart valves, structural failure of the valve's U-shaped outlet strut results in embolization of its blood flow-regulating disc (occluder), with consequent patient morbidity and mortality. After a variable and unpredictable number of