tungsten/atrophy

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to the fabrication of integrated circuit devices and, more particularly, to the fabrication of poly-silicon gate electrodes forming an integral part of the selected integrated circuit components. 2. Description of the

This application claims the benefit of the filing date of Korean Patent Application No. 10-2005-0133505 filed on Dec. 29, 2005 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference. TECHNICAL FIELD The present invention relates to a

CLAIM OF PRIORITY The present application claims priority from Japanese patent application JP 2011-066964 filed on Mar. 25, 2011, the content of which is hereby incorporated by reference into this application. FIELD OF THE INVENTION The present invention relates to a thermal sensor and a method of

TECHNICAL FIELD The present invention relates to a photocatalyst material and to a method for producing the same. More particularly, the present invention relates to a visible light responsive photocatalyst material and to a method for producing the same. BACKGROUND ART In recent years, attention is

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to semiconductor devices and SOI substrates, and particularly to a semiconductor device and an SOI substrate having improved insulating film and improved buried insulating film forming semiconductor elements. 2.

CROSS-REFERENCE TO RELATED APPLICATIONS This is the U.S. national phase application under 35 U.S.C. .sctn.371 of International Patent Application No. PCT/JP2007/056011, filed Mar. 23, 2007, and claims the benefit of Japanese Application Nos. 2006-082565, filed Mar. 24, 2006 and 2007-015430 filed