6 rezultatus
RELATED APPLICATIONS
The present invention is related to the following co-pending patent applications: Ser. No. 10/026,019 entitled "Vertical cavity surface emitting laser including indium and nitrogen in the active region," filed Dec. 27, 2001; Ser. No. 10/026,020 entitled "Vertical cavity surface
BACKGROUND OF THE INVENTION
Solid-state semiconductor lasers are important devices in applications such as optoelectronic communication systems and high-speed printing systems. Recently, there has been an increased interest in vertical cavity surface emitting lasers ("VCSELs") although edge emitting
RELATED APPLICATIONS
The present invention is related to the following patent applications: Ser. No. 10/026,016 entitled "Vertical cavity surface emitting laser including indium, antinomy and nitrogen in the active region," filed Dec. 20, 2001; Ser. No. 10/026,019 entitled Dec. 20, 2001; Ser. No.
TECHNICAL FIELD
This invention relates to vertical cavity surface emitting lasers and more particularly to vertical cavity surface emitting lasers utilizing combinations of nitrogen, aluminum, antimony, phosphorous and/or indium as a material system and as a means to increase VCSEL device
TECHNICAL FIELD
This invention relates to vertical cavity surface emitting lasers and more particularly to vertical cavity surface emitting lasers utilizing a combination of nitrogen, aluminum, antimony, phosphorous and/or indium as a material system and as a means to increase VCSEL device
FIELD OF THE INVENTION
The present invention relates to chain inorganic oxide fine particle groups, a process for preparing a dispersion of the fine particle groups, and uses of the fine particle groups.
More particularly, the invention relates to chain antimony-oxide fine particle groups comprising