A semiconductor device including a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.

Cheng; Kangguo

Doris; Bruce B.

Yamashita; Tenko

Zhang; Ying

International Business Machines Coroporation

Semiconductor device and method for making same

A semiconductor device includes a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.

International Business Machines Corporation

Methods for fabricating integrated circuits are provided. One method includes forming first and second FET trenches in an interlayer dielectric material on a semiconductor substrate. The first FET trench is partially filled with a first work function metal to define an inner cavity in the first FET trench. The first work function metal is a N-type work function metal or a P-type work function metal. The N-type work function metal is selected from the group consisting of titanium, tantalum, hafnium, ytterbium silicide, erbium silicide, and titanium silicide. The P-type work function metal is selected from the group consisting of cobalt, nickel, and tungsten silicide. The inner cavity and the second FET trench are filled with a second work function metal to form corresponding metal gate structures. The second work function metal is the other of the N-type work function metal or the P-type work function metal.

Hoon; Kim

Globalfoundries, Inc.

Methods for fabricating integrated circuits having improved metal gate structures

hafnium

dantų ėduonis

dental caries

hafnium/dantų ėduonis

Semiconductor device and method for making same

Semiconductor device and method for making same

Methods for fabricating integrated circuits having improved metal gate structures

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