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6 rezultatus
Semiconductor stack having a dielectric sidewall for prevention of oxidation of tungsten in tungsten capped poly-silicon gate electrodes
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BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention relates to the fabrication of integrated circuit devices and, more particularly, to the fabrication of poly-silicon gate electrodes forming an integral part of the selected integrated circuit components.
2. Description of the
Cobalt-based alloy electroless plating solution and electroless plating method using the same
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This application claims the benefit of the filing date of Korean Patent Application No. 10-2005-0133505 filed on Dec. 29, 2005 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein in its entirety by reference.
TECHNICAL FIELD
The present invention relates to a
Method of manufacturing the thermal fluid flow sensor
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CLAIM OF PRIORITY
The present application claims priority from Japanese patent application JP 2011-066964 filed on Mar. 25, 2011, the content of which is hereby incorporated by reference into this application.
FIELD OF THE INVENTION
The present invention relates to a thermal sensor and a method of
Photocatalyst material and method for producing same
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TECHNICAL FIELD
The present invention relates to a photocatalyst material and to a method for producing the same. More particularly, the present invention relates to a visible light responsive photocatalyst material and to a method for producing the same.
BACKGROUND ART
In recent years, attention is
Semiconductor device and SOI substrate
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BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to semiconductor devices and SOI substrates, and particularly to a semiconductor device and an SOI substrate having improved insulating film and improved buried insulating film forming semiconductor elements.
2.
Gold wire for semiconductor element connection
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CROSS-REFERENCE TO RELATED APPLICATIONS
This is the U.S. national phase application under 35 U.S.C. .sctn.371 of International Patent Application No. PCT/JP2007/056011, filed Mar. 23, 2007, and claims the benefit of Japanese Application Nos. 2006-082565, filed Mar. 24, 2006 and 2007-015430 filed
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