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5 resultaten
Electrical Properties and Interfacial Studies of HfxTi1-xO₂ High Permittivity Gate Insulators Deposited on Germanium Substrates.
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In this research, the hafnium titanate oxide thin films, TixHf1-xO₂, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide
Improved reliability from a plasma-assisted metal-insulator-metal capacitor comprising a high-k HfO2 film on a flexible polyimide substrate.
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We have used a sol-gel spin-coating process to fabricate a new metal-insulator-metal (MIM) capacitor comprising a 10 nm-thick high-k thin dielectric HfO(2) film on a flexible polyimide (PI) substrate. The surface morphology of this HfO(2) film was investigated using atomic force microscopy and
Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays.
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We report the directed assembly of single-walled carbon nanotubes (SWCNTs) at lithographically defined positions on gate oxide surfaces, allowing for the high yield ( approximately 90%) and parallel fabrication of SWCNT device arrays. SWCNTs were first chemically functionalized through diazonium
Group 4 transition metal-benzene adducts: carbon ring deformation upon complexation.
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Benzene is reacted with titanium, zirconium, and hafnium metal atoms, which are produced by laser-ablation. The M(C(6)H(6)), M(C(6)H(6))(2), and M(2)(C(6)H(6))(3) complexes are formed, isolated in solid argon, and identified by infrared spectroscopy using isotopic substitution of the benzene
Nanometre-thin indium tin oxide for advanced high-performance electronics.
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Although indium tin oxide (ITO) is widely used in optoelectronics due to its high optical transmittance and electrical conductivity, its degenerate doping limits exploitation as a semiconduction material. In this work, we created short-channel active transistors based on an ultra-thin (down to 4 nm)
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